Future of Wide-Bandgap Devices SiC, GaN and Diamond and Their Emerging Applications in Power Electronics
Organizers
Dr. Tanya Gachovska, MDA
Abstract
The need for high-voltage devices operating at high frequencies and temperature is growing, especially for advanced power electronics. Si-based power devices has some limitations. They are not able to meet these requirements without connecting many devices in series and in parallel, using snubbers and expensive cooling systems. Thus, the market of Si power devices have started to decrease and wide band gap semiconductors have attracted considerable attention. Research into SiC, GaN, and diamond as materials for power devices has been carried out over the past two decades.
SiC, GaN and diamond have wide-bandgap energy resulting in higher breakdown strength for a given blocking voltage. Therfore, SiC, GaN and diamond defices have smaller drift layers or channel lengths as compared to Si devices. As a result, the storage of the minority carriers or the input and output capacitance and, therefore, the switching losses are reduced. This leads to an increase of the switching frequency high than 0.5 MHz, reducing power systems passive components size and cost. In the last 5 years, more companies manufacturing SiC and GaN have come to the market and new startup companies have arised. The prace of SiC and GaN devices have decrease draticaly and more application
This special session will offer insights into the future and trends for SiC, GaN and diamond devices and their emerging applications in power electronics.
Short Bio of Organizers
Tanya Kirilova Gachovska received her M.Eng., and Ph.D. degrees, all in Electrical Engineering, from the University of Ruse, Bulgaria, in 1995 and 2003. She earned her second Ph.D. Degree in Electrical Engineering (Power Electronics), at the University of Nebraska-Lincoln (UNL), Lincoln, USA in 2012. Her Ph.D. thesis was “Modeling of Power Semiconductor Devices”. She worked as an Assistant Professor at the University of Ruse from 1999 to 2003. She conducted research from 2004 to 2006 and taught for a semester in 2006 at McGill University in Montréal. She worked as a Postdoctoral Research Scientist in the area of Pulsed Electric Fields at UNL from 2012 to 2013. During her Ph.D. studies at UNL, she taught various courses and labs, and continued a collaboration in Pulsed Electric Fields research with McGill University, University of Ruse, University of Djiali Liabes, Sidi Bel Abbes, Algeria and École Nationale Supérieure Agronomique, El Harrach, Algeria. She joined Solantro Semiconductor, Corp., Ottawa in 2013. Dr. Gachovska authored or coauthored more than 30 technical papers and conference presentations, two books, and two book chapters and holds a world patent in Pulsed Electric Fields. In 2019 Dr. Gachovska become a professional engineer of Ontario. She is the Chairs of IEEE-IAS Power Electronics Devices and Components Committee (PEDCC) and PELS Ottawa. She is PEDCC standard chair and chair for IEEE Standard for “Datasheet Parameters and Tests for Integrated Gate Drivers PEDCC”. Dr. Gachovska is a senior IEEE member.
Speakers and Presentations
1. Anuj Narain , Director Power Platforms and Applications at Wolfspeed
Silicon Carbide Beyond EV Drivetrains – Meeting the Demands of Modern Day Power Systems
2. Filippo Di Giovanni , WBG Strategic Marketing Manager within the Power Transistor MACRO Division at ST Microelectronics, based in Catania, Italy
WBG Semiconductors and Innovative Packaging Delivering Efficiency Gains in Power Circuit Designs
3. Julian Styles, Director Business Development at GaN Systems LLC
The future of GaN – Technology and Applications
4. Manpuneet Benipal, PhD Co-founder & CEO, Advent Diamond, Inc.
Future of Wide-Bandgap Devices SiC, GaN and Diamond and Their Emerging Applications in Power Electronics