P2964 IEEE Standard for Datasheet Parameters and Tests for Integrated Gate Drivers

Organizers

Dr. Tanya Gachovska, MDA

Abstract

Power electronics applications employ power switches. Every switch requires a gate driver, a power amplifier that receives a low-power input from a controller and produces a high-current driving output for the gate of high-power switches such as an IGBT, MOSFET, JFET, or HEMT. Some gate drivers have protection features such as fast short-circuit protection (e.g. DESAT), active Miller clamp, shoot-through protection, shutdown, and overcurrent protection, which make them well-suited for both silicon and wide-bandgap power devices.

However, it is difficult to compare the IC gate drivers using their datasheet parameters. Every company names the drivers’ pins and parameters with different approaches. The parameters are tested at different conditions and methodology or in most of the cases the conditions and the methodology are not given. Only some companies give the selected test circuits. IEEE-IAS-PEDCC has initiated a working group for a standard to provide datasheet parameters and tests for integrated gate drivers, which include non-isolated gate drive, level-shifted gate drive, and isolated gate drive. The standard scope includes terminology, mnemonic, and pins’ description; parameters and definitions; and test methods and conditions to obtain the parameters. The special session will include an update on the working group.

Short Bio of Organizers

Tanya Kirilova Gachovska received her M.Eng., and Ph.D. degrees, all in Electrical Engineering, from the University of Ruse, Bulgaria, in 1995 and 2003. She earned her second Ph.D. Degree in Electrical Engineering (Power Electronics), at the University of Nebraska-Lincoln (UNL), Lincoln, USA in 2012. Her Ph.D. thesis was “Modeling of Power Semiconductor Devices”. She worked as an Assistant Professor at the University of Ruse from 1999 to 2003. She conducted research from 2004 to 2006 and taught for a semester in 2006 at McGill University in Montréal. She worked as a Postdoctoral Research Scientist in the area of Pulsed Electric Fields at UNL from 2012 to 2013. During her Ph.D. studies at UNL, she taught various courses and labs, and continued a collaboration in Pulsed Electric Fields research with McGill University, University of Ruse, University of Djiali Liabes, Sidi Bel Abbes, Algeria and École Nationale Supérieure Agronomique, El Harrach, Algeria. She joined Solantro Semiconductor, Corp., Ottawa in 2013. Dr. Gachovska authored or coauthored more than 30 technical papers and conference presentations, two books, and two book chapters and holds a world patent in Pulsed Electric Fields. In 2019 Dr. Gachovska become a professional engineer of Ontario. She is the Chairs of IEEE-IAS Power Electronics Devices and Components Committee (PEDCC) and PELS Ottawa. She is PEDCC standard chair and chair for IEEE Standard for “Datasheet Parameters and Tests for Integrated Gate Drivers PEDCC”. Dr. Gachovska is a senior IEEE member.Tanya Kirilova Gachovska received her M.Eng., and Ph.D. degrees, all in Electrical Engineering, from the University of Ruse, Bulgaria, in 1995 and 2003. She earned her second Ph.D. Degree in Electrical Engineering (Power Electronics), at the University of Nebraska-Lincoln (UNL), Lincoln, USA in 2012. Her Ph.D. thesis was “Modeling of Power Semiconductor Devices”. She worked as an Assistant Professor at the University of Ruse from 1999 to 2003. She conducted research from 2004 to 2006 and taught for a semester in 2006 at McGill University in Montréal. She worked as a Postdoctoral Research Scientist in the area of Pulsed Electric Fields at UNL from 2012 to 2013. During her Ph.D. studies at UNL, she taught various courses and labs, and continued a collaboration in Pulsed Electric Fields research with McGill University, University of Ruse, University of Djiali Liabes, Sidi Bel Abbes, Algeria and École Nationale Supérieure Agronomique, El Harrach, Algeria. She joined Solantro Semiconductor, Corp., Ottawa in 2013. Dr. Gachovska authored or coauthored more than 30 technical papers and conference presentations, two books, and two book chapters and holds a world patent in Pulsed Electric Fields. In 2019 Dr. Gachovska become a professional engineer of Ontario. She is the Chairs of IEEE-IAS Power Electronics Devices and Components Committee (PEDCC) and PELS Ottawa. She is PEDCC standard chair and chair for IEEE Standard for “Datasheet Parameters and Tests for Integrated Gate Drivers PEDCC”. Dr. Gachovska is a senior IEEE member.

Speakers and Presentations

1. Wolfgang Frank, Infineon Technologies in Munich/Germany
Standardization of “Active Miller Clamp”

2. Zheyu Zhang , Assistant Professor, Clemson University
Gate Driver Absolute Maximum Ratings

3. Cong Li, General Electric
Why Do We Need a Standard for Gate

4. Inki Park, ON Semiconductor
Desaturation Protection Requirement

5. Ryan Schnell, Analog Devices iCoupler
Comparing Gate Driver Timing and Drive Strength Specifications

6. Srivatsa Raghunath
Gate Driver Pin Naming Standard